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A study of the degree of relaxation of AlGaN epilayers on GaN template |
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| Authors: | JC Zhang MF Wu JF Wang JP Liu YT Wang J Chen RQ Jin H Yang |
| Institution: | aState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China bDepartment of Technical Physics, Peking University, Beijing 100871, People's Republic of China cDepartment of Physics, Wuhan University, Wuhan 430072, People's Republic of China |
| Abstract: | The strain state of 570 nm AlxGa1−xN layers grown on 600 nm GaN template by metal organic chemical vapor deposition was studied using Rutherford backscattering (RBS)/channeling and triple-axis X-ray diffraction measurements. The results showed that the degree of relaxation (R) of AlxGa1−xN layers increased almost linearly when x 0.42 and reached to 70% when x=0.42. Above 0.42, the value of R varied slowly and AlxGa1−xN layers almost full relaxed when x=1 (AlN). In this work the underlying GaN layer was in compressive strain, which resulted in the reduction of lattice misfit between GaN and AlxGa1−xN, and a 570 nm AlxGa1−xN layer with the composition of about 0.16 might be grown on GaN coherently from the extrapolation. The different shape of (0 0 0 4) diffraction peak was discussed to be related to the relaxation. |
| Keywords: | A1 High resolution X-ray diffraction A1 Rutherford backscattering/channeling A3 Metalorganic chemical vapor deposition B1 Nitrides B2 Semiconducting gallium compounds |
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