| 多晶Li3+xV1-xTxO4(T=Ge,Si)离子导电性能的改善 |
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| 引用本文： | 王超英,王连忠,石磊,陈立泉.多晶Li3+xV1-xTxO4(T=Ge,Si)离子导电性能的改善[J].物理学报,1984,33(12):1700-1706. |
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| 作者姓名： | 王超英 王连忠 石磊 陈立泉 |
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| 作者单位： | (1)中国科学技术大学物理系,83届毕业生; (2)中国科学院物理研究所 |
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| 摘 要： | 本文用阻抗谱方法研究了Li3+xV1-xTxO4(T=Si,Ge)多晶的离子导电性,发现一些工艺条件如成型压强、烧结时间和烧结程序对电导率有很大影响。注意分析了这些影响的物理起因。最佳工艺条件是:在大约8t/cm2压强下成型样品。在1000℃连续烧结5至6天,烧结过程中,应尽量避免温度波动。在此条件下制备的Li3.5V0.5Ge0.5关键词：
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| 收稿时间： | 1984-02-17 |
IMPROVEMENT OF IONIC CONDUCTION IN POLYCRY-STALLINE Li3+xV1-xTxO4 (T=Ge,Si) |
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| WANG CHAO-YING,WANG LIAN-ZHONG,SHI LEI and CHEN LI-QUAN.IMPROVEMENT OF IONIC CONDUCTION IN POLYCRY-STALLINE Li3+xV1-xTxO4 (T=Ge,Si)[J].Acta Physica Sinica,1984,33(12):1700-1706. |
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| Authors: | WANG CHAO-YING WANG LIAN-ZHONG SHI LEI and CHEN LI-QUAN |
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| Abstract: | The ionic conduction in polycrystalline Li3+xV1-xTxO4(T=Si, Ge) has been studied by using AC impedance method. It was found that some processing conditions, such as forming pressure, sintering time and sintering procedure have great effect on ionic conductivity. The attention was focused on the physical origins of these effects. The best specimens could be prepared under forming pressure about 8t/cm2 and continual sintering at 1000℃ for 5 to 6 days. The temperature fluctuation should be avoided during sintering process. We found that, at 25℃, the bulk ionic conductivities of polycrystalline Li3.5V0.5Ge0.5O4 and Li3.3V0.7Si0.3O4 prepared under optimal conditions are 2.2×10-5Ω-1cm-1and 1.9×10-5Ω-1cm-1 respectively. |
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