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Anodic oxidation of porous silicon bilayers |
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| Authors: | R Guerrero-Lemus F A Ben-Hander J D Moreno R J Martín-Palma J M Martínez-Duart P Gmez-Garrido M L Marcos J Gonzlez-Velasco |
| Institution: | a Departamento Física Aplicada, C-XII and Instituto de Ciencia de Materiales, CSIC, Universidad Autónoma de Madrid, 28049 Madrid, Spain b Departamento Física Fundamental y Experimental, Universidad de La Laguna, 38206 S/C de Tenerife, Spain c Departamento de Química, C-IX, Universidad Autónoma de Madrid, 28049 Madrid, Spain |
| Abstract: | This paper focuses on the study of the effect of anodic oxidation in porous silicon bilayers composed of two porous layers of different porosities. The order of the two types of layers has been alternated, and the thicknesses and refractive indices have been optically characterized by Fourier transform infrared spectroscopy. The results show that the refractive index of anodic oxidized porous silicon is reduced significantly with respect to just formed porous silicon. It is also observed that the quality of the oxidation is related to the porosity of the inner porous layer of the silicon bilayer structure. This effect is interpreted in terms of quantum size effects. |
| Keywords: | Porous silicon Multilayer Anodic oxidation Optical filter |
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