Ion-beam synthesis and growth mechanism of diamond-like materials |
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Authors: | C Ronning |
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Institution: | 1.II. Physikalisches Institut, Universit?t G?ttingen, Bunsenstr. 7–9, 37073 G?ttingen, Germany,DE |
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Abstract: | Opposite to most other deposition methods, the dominating nucleation and growth mechanism during ion-beam deposition of energetic
ions in the range between 10 eV and 10 keV occurs in a region of a few nanometers below the surface of the growing film. This
process is called ‘subplantation’ – emphasizing the implantation of ions into a subsurface region. Ordering and phase formation
is a result of the interaction of the deposited ions with the solid state that takes place within the short time scale of
femto- and picoseconds. This extreme non-equilibrium process can result in metastable amorphous or crystalline structures.
This review will present several examples of the influence of the deposition parameters on the properties of diamond-like
materials synthesized using mass-selected ion-beam deposition. Furthermore, several existing models of the deposition process
will be presented and critically discussed.
Received: 11 November 2002 / Accepted: 12 November 2002 / Published online: 4 April 2003
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ID="*"Corresponding author. Fax: +49-551/39-4493, E-mail: carsten.ronning@phys.uni-goettingen.de |
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Keywords: | PACS: 68 55 Ac 81 15 Jj 81 15 Aa |
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