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Effective insulating properties of autooxidized monolayers using organic ditellurides
Authors:Nakamura Tohru  Yasuda Satoshi  Miyamae Takayuki  Nozoye Hisakazu  Kobayashi Nobuhiko  Kondoh Hiroshi  Nakai Ikuyo  Ohta Toshiaki  Yoshimura Daisuke  Matsumoto Mutsuyoshi
Affiliation:Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5-2, 1-1 Higashi 1-Chome, Japan. tohru.nakamura@aist.go.jp
Abstract:Dialkyl ditellurides adsorb on Au(111) surfaces by wet deposition to form highly resistive autooxidized monolayers (AMs) due to the automatic formation of oxidized tellurium species after the adsorption of ditellurides on the surfaces under air in contrast to the case of the lighter dichalcogenides such as disulfides and diselenides. The ditelluride AMs could be applied to the selective fabrication of effective resistance, ferroelectric layers, piezoelectric parts, and/or new imaging systems using the feature of tellurium oxide in small device circuits.
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