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Epitaxial InGaAs Quantum Dots in Al0.29Ga0.71As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles |
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| Authors: | Kosarev A. N. Chaldyshev V. V. Kondikov A. A. Vartanyan T. A. Toropov N. A. Gladskikh I. A. Gladskikh P. V. Akimov I. Bayer M. Preobrazhenskii V. V. Putyato M. A. Semyagin B. R. |
| Affiliation: | 1.Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia ;2.Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia ;3.ITMO University, 197101, St. Petersburg, Russia ;4.Experimentelle Physik 2, Technische Universität Dortmund, 44221, Dortmund, Germany ;5.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia ; |
| Abstract: | Optics and Spectroscopy - Quantum dots of indium gallium arsenide buried in a thin layer of aluminum gallium arsenide were grown by means of molecular-beam epitaxy. The influence of silver... |
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