Exciton related photoluminescence stimulation in SiC nanocrystals |
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| Authors: | T Torchynska G Polupan |
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| Institution: | 1. Imec, Leuven, Belgium;2. Instituut voor Kern-en Stralingsfysica, KU Leuven, Leuven, Belgium;3. Photonics Research Group (INTEC), Ghent University–Imec, Ghent, Belgium;4. Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Ghent, Belgium;5. 3;1. Institute of High Technologies, Taras Shevchenko National University of Kyiv, 01601 Volodymyrska str. 64, Kyiv, Ukraine;2. Faculty of Chemistry, Taras Shevchenko National University of Kyiv, 01601 Volodymyrska str. 64, Kyiv, Ukraine |
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| Abstract: | The paper presents the results of porous SiC characterization using scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence spectroscopy techniques. XRD study shows the investigated porous 6H-SiC layers contain inclusions of 4H-SiC and 15R-SiC polytypes as well as the amorphous graphite phase. Photoluminescence study of PSiC layers with different thicknesses and SiC NC sizes reveals the intensity stimulation for exciton and defect-related PL bands. The intensity stimulation of defect-related PL bands is due to the increase, at the etching process, of the concentration of surface defects, apparently to deal with carbon. The intensity enhancement for exciton-related PL bands is attributed to the exciton recombination rate increasing due to the realization of exciton confinement and exciton–polariton effects in big size SiC NCs of different polytypes (6H-PSiC with inclusions of 15R- and 4H-PSiC). |
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