CL study of yellow emission in ZnO nanostructures annealed in Ar and O2 atmospheres |
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| Authors: | A. González M. Herrera-Zaldívar J. Valenzuela A. Escobedo-Morales U. Pal |
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| Affiliation: | 1. Centro de Investigación Científica y de Educación Superior de Ensenada, Apartado Postal 2732, Ensenada, Baja California 22860, Mexico;2. Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Apdo. Postal 356, Ensenada, BC 22800, Mexico;3. Instituto de Física, Universidad Autónoma de Puebla, Apdo. Postal J-48, Puebla, Pue. 72570, Mexico;1. Facultad de Ciencias, Universidad Nacional de Ingeniería, P.O. Box 31-139, Lima 31, Peru;2. CEA Grenoble/LETI, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, France;3. Univ. Grenoble Alpes, Inst NEEL, F-38000 Grenoble, France;4. CNRS, Inst NEEL, F-38042 Grenoble, France;5. DQIAQF-INQUIMAE, FCEyN-Universidad de Buenos Aires, Ciudad Universitaria, Pab. II, 1428 Buenos Aires, Argentina;6. ECyT, 3iA, Universidad Nacional de San Martín, Martín de Irigoyen N° 3100 (1650), San Martín, Pcia de Buenos Aires, Argentina;7. CMA, FCEyN-Universidad de Buenos Aires, Ciudad Universitaria, Pab. I, 1428 Buenos Aires, Argentina;8. University Grenoble Alpes, INAC-SPRAM, F-38000 Grenoble, France;9. CNRS, INAC-SPRAM, F-38000 Grenoble, France;10. CEA, INAC-SPRAM, F-38000 Grenoble, France;1. Unité de recherche de Physique des matériaux Isolants et Semi-Isolants, Faculté des sciences de Sfax, Université de Sfax, Tunisia;2. Unité de physique des dispositifs à semi-conducteurs, Faculté des sciences de Tunis, Université de Tunis, El Manar, 2092 Tunis, Tunisia;3. Unité de Spectroscopie Raman, Faculté des Sciences de Tunis, Campus Universitaire, El Manar, 2092 Tunis, Tunisia;1. Department of Physics, Government V.Y.T. PG. Autonomous College, Durg, 491001 C.G., India;2. RTM University Nagpur, Maharashtra, India;1. Energy Materials & Surface Science Laboratory, Solar Energy Research Center, School of Chemical Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea;2. New & Renewable Energy Material Development Center (NewREC), Chonbuk National University, Jeonbuk, Republic of Korea |
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| Abstract: | The yellow emission of thermally treated undoped and In doped ZnO nanostructures was studied by the cathodoluminescence (CL) technique. CL spectra acquired at room temperature of the as-grown samples revealed two emissions at about 3.2 eV and 2.13 eV, corresponding to the near band edge and defect related emissions, respectively. On annealing the samples at 600 °C in Ar and O2 atmospheres, the defect emission suffers a red shift, irrespective of the annealing atmosphere. This red shift is explained in terms of variations in the relative intensities of the two component bands centered at about 2.24 eV and 1.77 eV, which were clearly resolved in the CL spectra acquired at low temperature of the annealed samples. A decrease of the relative intensity of the yellow emission (2.24 eV) was observed for all thermally annealed samples. The annealing of zinc interstitial point defects is proposed as a possible mechanism to explain this intensity decrease. |
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