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Capacitance Transient X-ray Absorption Spectroscopy of semiconducting structures
Authors:N Bazlov  O Vyvenko  A Bondarenko  M Trushin  A Novikov  A Vinogradov  M Brzhezinskaya  R Ovsyannikov
Institution:1. V.A. Fok Institute of Physics, St.-Petersburg State University, Ulyanovskaya 1, 198504 St.-Petersburg, Petrodvoretz, Russia;2. BESSY, Albert-Einstein-Str. 15, 12489 Berlin, Germany;1. Institut d’Electronique Fondamentale, UMR CNRS 8622, University Paris Sud, University Paris Saclay, Orsay 91405, France;2. CNRS, Laboratoire de Physique des Interfaces et Couches Minces (LPICM), Ecole Polytechnique, 91128 Palaiseau, France;3. ITMO University, St. Petersburg 197101, Russia;4. St. Petersburg Academic University, Khlopina 8/3 A, St. Petersburg 194021, Russia;5. Peter the Great Saint-Petersburg Polytechnic University, Polytechnicheskaya 29, St. Petersburg 195251, Russia;6. Laboratoire de Photonique et de Nanostructures Route de Nozay, 91460 Marcoussis, France;1. Department of Physics, University of the Free State, South Africa;2. Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi Arabia;3. Department of Materials Engineering, College of Engineering, Kwame Nkrumah University of Science and Technology, Kumasi, Ghana;4. Department of Chemistry, Pittsburg State University, Pittsburg, KS 66762, USA;5. Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Saudi Arabia;6. Department of Physics, Faculty of Science, F?rat University, Elazig, Turkey;1. Department of Physics, Faculty of Sciences, Gazi University, Ankara, Turkey;2. Vocational School of Health Services, Bingöl University, Bingöl, Turkey;1. Department of Chemistry, University of California Berkeley, Berkeley, CA 94720, USA;2. Ultrafast X-ray Science Laboratory, Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;3. Department of Physics, University of California Berkeley, Berkeley, CA 94720, USA;1. Nanoptronics Research Center, Iran University of Science and Technology, Iran;2. Nanolab, Malke Ashtar University of Technology, Iran
Abstract:A new technique for the detection of X-ray absorption in multilayer structures, Capacitance Transient X-ray Absorption Spectroscopy (CapTXAS), has been developed. CapTXAS technique utilizes the fact that excess carriers generated in the semiconductor structure under the X-ray excitation can be captured with deep level electronic states at the structure interface(s) within the space charge region of the Schottky-diode giving rise to the diode capacitance changes. Short periodical refilling electric pulses are applied to the structure to define the initial trap occupancy and the first derivative of the capacitance transients after the bias voltage recovery is measured. We installed this technique at BESSY Russian–German Beam Line and applied to the measurements on two test semiconductor structures: Au–/nickel–phtalocyanine/–silicon and Al-bonded silicon wafer.
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