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Emission of Si nanoclusters of different phases in amorphous hydrogenated silicon
Authors:TV Torchynska
Institution:1. Department of Chemical and Materials Engineering, Hefei College, Hefei City 230601, PR China;2. School of Chemistry and Biological Engineering, Hezhou University, Hezhou 542899, PR China;3. Key Laboratory of Materials for Energy Conversion, Chinese Academy of Sciences, Hefei City 230601, PR China;4. Hefei Lucky & Technology Industry Co. Ltd., Hefei City 230041, PR China;1. “Petru Poni” Institute of Macromolecular Chemistry, 700487 Iasi, Romania;2. Department of Natural and Synthetic Polymers, “Gh. Asachi” Technical University, Iasi, Romania;3. Centre of Advanced Research in Bionanoconjugates and Biopolymers, “Petru Poni” Institute of Macromolecular Chemistry, 700487 Iasi, Romania;1. National Research & Development Institute for Chemistry and Petrochemistry ICECHIM, Splaiul Independentei No. 202, 6th District, P.O. 35-174, 060021 Bucharest, Romania;2. University of Bucharest, Faculty of Physics, 3Nano-SAE Research Centre, P.O. Box MG-38, 077125 Magurele, Romania;3. University of Bucharest, Faculty of Chemistry, Bd. Regina Elisabeta 4-12, 1st District, Bucharest, Romania;4. University Politehnica of Bucharest, Faculty of Applied Chemistry and Materials Science, 1-7 Polizu St., 011061 Bucharest, Romania;1. College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064, China;2. North China Research Institute of Electro-Optics, 4 Jiuxianqiao Street, Chaoyang District, Beijing 100015, China;1. Physical Chemistry, Department of Chemistry, Lund University, 22100 Lund, Sweden;2. Adolphe Merkle Institute, University of Fribourg, 1723 Marly, Switzerland;3. Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland;4. BASF SE, Modelling and Formulation Research, Formulation Platform, 67056 Ludwisghafen am Rhein, Germany
Abstract:This paper presents the results of PL spectrum studies for Si nano-clusters in an amorphous silicon matrix. The four amorphous Si layers were prepared by the hot-wire CVD method on glass substrates at a temperature of 250 °C and different filament temperatures in the range of 1650–1950 °C. The joint analysis of PL and X ray diffraction results dependant on technological conditions has been done. PL bands deal with Si nanocrystals and amorphous Si nanoclusters are discussed as well.
Keywords:
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