Spectral image cathodoluminescence,photoluminescence and Raman study of GaAs layers grown on Si substrates |
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| Authors: | O. Martínez H. Angulo M. Avella M.A. González L.F. Sanz J. Jiménez B. Gérard E. Gil-Lafon |
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| Affiliation: | 1. Optronlab group, Dpto. Física de la Materia Condensada, Edificio I+D, Paseo de Belén 1, 47011,Valladolid, Spain;2. THALES, Corporate Research Laboratory, 91404 Orsay Cedex, France;3. LASMEA UMR CNRS 6602, Université Blaise Pascal, Les Cézeaux, 63177 Aubiére Cedes, France;1. IHP, Im Technologiepark 25, Frankfurt (Oder), 15236 Germany;2. Dipartimento di Scienza dei Materiali, Università Milano-Bicocca, Via Cozzi 55, Milano, I-20125 Italy;3. Dipartimento di Scienze, Università degli Studi Roma Tre, Roma, I-00146 Italy;4. Dipartimento di Fisica ‘E Fermi’, Università di Pisa, largo Pontecorvo 3, Pisa, I56127 Italy;5. BTU Cottbus-Senftenberg, Konrad-Zuse Straße 1, Cottbus, 03046 Germany;6. Technische Universität Berlin, HFT4, Einsteinufer 25, Berlin, 10587 Germany;1. CEA Grenoble, INAC-SPrAM (UMR 5819 (CEA,CNRS, UJF))-LEMOH, France;2. CEA Grenoble, INAC-SP2M (UMR-E CEA-UJF)-SiNaPS Lab. 17, Rue des Martyrs, 38054 Grenoble, France;3. Institut des Matériaux Jean Rouxel (IMN),Université de Nantes, CNRS, 2 Rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France;1. School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, 222 South Tianshui Road, Lanzhou 730000, China;2. School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan;1. School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, PR China;2. Canadian Solar Inc., 199 Lushan Road, SND, Suzhou 215129, PR China;3. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China;1. Advanced Materials and Devices Division, CSIR-National Physical Laboratory, New Delhi 110012, India;2. Academy of Scientific & Innovative Research, CSIR-NPL Campus, New Delhi 110012, India;1. Jiangsu Key Laboratory of Thin Films, College of Physics, Optoelectronics and Energy, Soochow University, Suzhou 215006, PR China;2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China |
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| Abstract: | GaAs layers grown on Si substrates by the conformal method were investigated by means of Raman, photoluminescence and cathodoluminescence spectroscopies. The combination of these optical techniques allows a better knowledge of the properties of these layers, with special emphasis on the stress distribution and the incorporation of dopants. In particular, samples intentionally doped, with alternate doped and undoped fringes, have been analyzed. The effective incorporation of Si atoms in the GaAs structure to produce n-type layers and the formation of Si complexes are determined by Raman and cathodoluminescence data. The lateral quasi-periodic stress distribution, typically observed in these layers, is shown to affect the Si incorporation. |
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