Thermoelectric properties and structural instability of type-I clathrate Ba8Ga16Sn30 at high temperatures |
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| Authors: | Y Saiga K Suekuni B Du T Takabatake |
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| Institution: | 1. Department of Quantum Matter, ADSM, Hiroshima University, Kagamiyama 1-3-1, Hihashi-Hiroshima 739-8530, Japan;2. School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000, China;3. Institute for Advanced Materials Research, Hiroshima University, Higashi-Hiroshima 739-8530, Japan;1. Advanced Materials and Devices Laboratory, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon 305-343, Republic of Korea;2. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea;1. Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Beijing, 100049, PR China;2. Department of Materials Science and Engineering, Southern University of Science and Technology, ShenZhen, GuangDong, 518055, PR China;3. INFN – Laboratori Nazionali di Frascati, Via E. Fermi 40, Frascati, 00044, Italy;4. AECC-Beijing Institute of Aeronautical Materials, Beijing 100095, PR China;5. College of Chemistry and Material Science, Shandong Agricultural University, 271018, Taian, Shandong, PR China;6. RICMASS, Rome International Center for Materials Science Superstripes, Via dei Sabelli 119A, 00185 Rome, Italy;1. Department of Applied Physics, Graduate School of Engineering, Tohoku University, 6-6-05 Aramaki, Aoba, Sendai, Miyagi, 980-8579, Japan;2. Ricoh Institute of Future Technology, Ricoh Company, Ltd., 16-1 Shinei-cho, Tsuzuki, Yokohama, Kanagawa, 224-0035, Japan;1. Faculty of Science, King Mongkut''s Institute of Technology Ladkrabang, Chalongkrung Rd, Ladkrabang, Bangkok, 10520, Thailand;2. Faculty of Science and Technology, Rajamangala University of Technology Suvarnabhumi, Nonthaburi, 11000, Thailand;3. Thailand Center of Excellence in Physics, Commission on Higher Education, Bangkok, 10400, Thailand;4. College of Advanced Manufacturing Innovation, King Mongkut''s Institute of Technology Ladkrabang, Chalongkrung Rd. Ladkrabang, Bangkok, 10520, Thailand;1. CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China;2. University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing 100049, China;3. College of Materials Science and Engineering, Donghua University, 2999 North Renmin Road, Shanghai 201620, China |
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| Abstract: | Type-I clathrate Ba8Ga16Sn30 is known as a typical example showing glass-like behavior in the thermal conductivity at low temperatures. We report on thermoelectric properties above room temperature for the p- and n-type single crystals which were grown from Ga–Sn double flux and Sn single flux, respectively. The measurements of electrical resistivity showed hysteretic behaviors when the sample was heated to 600 K. Powder X-ray diffraction analysis indicated that the type-I structure changed to the type-VIII after the sample was heated to 600 K. By using the data of Seebeck coefficient, electrical resistivity, and thermal conductivity, we estimated the dimensionless figure of merit ZT for the type-I Ba8Ga16Sn30. For the p- and n-type samples, the values of ZT reach 0.58 and 0.50 at around 450 K, respectively, which values are approximately half of those for the type-VIII counterparts. |
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