In-situ mechanical characterization of wurtzite InAs nanowires |
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| Authors: | Róbert Erdélyi Morten Hannibal Madsen György Sáfrán Zoltán Hajnal István Endre Lukács Gergő Fülöp Szabolcs Csonka Jesper Nygård János Volk |
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| Affiliation: | 1. Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest, Pusztaszeri út 59-67, Hungary;2. University of Pannonia, Faculty of Information Technology, Doctoral School of Molecular- and Nanotechnologies, 8200 Veszprém, Egyetem út 10, Hungary;3. University of Copenhagen, Niels Bohr Institute, Nano-Science Center, 2100 Copenhagen, Denmark;4. Budapest University of Technology and Economics, Department of Physics, 1111 Budapest, Budafoki út 6, Hungary;1. Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, PR China;2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, PR China;1. Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD, UK;2. Department of Physics, University of the Punjab, Quaid-i-Azam Campus, Lahore 54590, Pakistan;1. Key Laboratory of Marine New Materials and Related Technology, Zhejiang Key Laboratory of Marine Materials and Protection Technology, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, PR China;2. Mechanical Systems Engineering, Kogakuin University, 2665-1 Nakanomachi, Hachiouji-shi, Tokyo 192-0015, Japan;1. College of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, 257 Fuller Road, Albany, NY 10027, USA;2. Solar-Tectic LLC, 416 Long Hill RD E, Briarcliff Manor, NY, USA;3. Blue Wave Semiconductors, Inc. BW Technology Center, 1450 South Rolling Road, Suite 4064, Baltimore, MD 21227, USA |
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| Abstract: | High aspect ratio vertical InAs nanowires were mechanically characterized in a scanning electron microscope equipped with two micromanipulators. One, equipped with a calibrated atomic force microscope probe, was used for in-situ static bending of single nanowires along the 〈11–20〉 crystallographic direction. The other one was equipped with a tungsten tip for dynamic resonance excitation of the same nanowires. This setup enabled a direct comparison between the two techniques. The crystal structure was analyzed using transmission electron microscopy, and for InAs nanowires with a hexagonal wutzite crystal structure, the bending modulus value was found to BM=43.5 GPa. This value is significantly lower than previously reported for both cubic zinc blende InAs bulk crystals and InAs nanowires. Besides, due to their high resonance quality factor (Q>1200), the wurtzite InAs nanowires are shown to be a promising candidate for sub-femtogram mass detectors. |
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