Electrical properties and Raman scattering investigation of Ag doped ZnO thin films |
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| Authors: | WJ Li CY Kong HB Ruan GP Qin GJ Huang TY Yang WW Liang YH Zhao XD Meng P Yu YT Cui L Fang |
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| Institution: | 1. Optic Engineering Laboratory, Chongqing Normal University, Chongqing, 400047, People’s Republic of China;2. College of Physics, Chongqing University, Chongqing, 400030, People’s Republic of China;1. National Key Laboratory of Crystal Materials and School of Physics, Shandong University, Jinan, Shandong 250100, China;2. School of Physics and Engineering, Qufu Normal University, Qufu, Shandong 273165, China;3. Physics Department, University of Hong Kong, Pokfulam Road, Hong Kong, China;1. Department of Materials Engineering and Ceramic, CICECO, University of Aveiro, Campus Santiago, 3810-193 Aveiro, Portugal;2. TEMA-NRD, Mechanical Engineering Department and Aveiro Institute of Nanotechnology (AIN), University of Aveiro, 3810-193 Aveiro, Portugal;3. Department of Physics, University of Aveiro, Campus Santiago, 3810-193 Aveiro, Portugal;1. School of Physics and Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China;2. Optics and Photonic Technology Laboratory, Nanjing University of Information Science & Technology, Nanjing 210044, China |
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| Abstract: | Ag-doped ZnO thin films were deposited on quartz glass substrates by a radio-frequency (RF) magnetron sputtering technique at room temperature (RT). The influence of Ag doping content on the electrical and Raman scattering properties of ZnO films were systematically investigated by Hall measurement system and Raman scattering spectrum. Two additional local vibrational modes (LVMs) at 230.0 and 394.5 cm?1 induced by Ag dopant in ZnO:Ag films were observed by Raman analyses at RT, corresponding to Ag atoms located at O sites (LV MZn?Ag) and Zn sites (LV MAg?O) in ZnO lattice. Moreover, we further studied the effect of donor AgO and acceptor AgZn defects on the electrical properties of ZnO:Ag films. The results indicate that O-rich condition is preferred to suppress the formation of AgO defects and enhance AgZn defects. The p-type ZnO:Ag film was achieved by properly optimizing the annealing conditions under O-rich condition. |
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