Anomalous Hall effect in polycrystalline Ni films |
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| Authors: | ZB Guo WB Mi Q Zhang B Zhang RO Aboljadayel XX Zhang |
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| Institution: | 1. Department of Physics, University of Science and Technology Beijing, Beijing 100083, China;2. Beijing Engineering Research Center of Detection and Application for Weak Magnetic Field, University of Science and Technology Beijing, Beijing 100083, China;3. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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| Abstract: | We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (4–6 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well. |
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