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Evaluation of zinc self-diffusion at the interface between homoepitaxial ZnO thin films and (0001) ZnO substrates
Authors:Ken Watanabe  Kenji Matsumoto  Yutaka Adachi  Takeshi Ohgaki  Tsubasa Nakagawa  Naoki Ohashi  Hajime Haneda  Isao Sakaguchi
Affiliation:1. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;2. Kyushu University, 6-1 Kasuga-kouen, Kasuga, Fukuoka 816-8580, Japan;1. Department of Electronics and Communication Engineering, Haldia Institute of Technology, HIT Campus, Haldia 721657, West Bengal, India;2. Department of Physics, Tamralipta Mahavidyalaya, Tamluk 721636, West Bengal, India;3. Department of Physics, Jalpaiguri Government Engineering College, Jalpaiguri 735102, West Bengal, India;4. CSIR—Central Mechanical Engineering Research Institute, Durgapur 713209, West Bengal, India;1. Jo?ef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia;2. Jo?ef Stefan International Postgraduate School, Jamova 39, 1000 Ljubljana, Slovenia;3. Laboratoire CRISMAT, UMR 6508 CNRS/ENSICAEN, 6 bld Maréchal Juin, 14050, Caen Cedex, France;1. Thin Film Physics Department, Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, Konkoly-Thege M. str. 29-33, 1121 Budapest, Hungary;2. Institute for Materials Science and Technology, Bay Zoltán Nonprofit Ltd for Applied Research, Fehérvári str. 130, 1116 Budapest, Hungary;1. Air Force Research Laboratory, Materials and Manufacturing Directorate (AFRL/RXA) Wright-Patterson AFB, OH, 45433-7707, USA;2. University of Dayton Research Institute, Dayton, OH, 45469-0170, USA;3. Center of Excellence for Thin Film Research and Surface Engineering, University of Dayton, Dayton, OH 45469-0170, USA;4. Departments of Physics, University of Dayton, Dayton, OH, 45469, USA;5. Commissariat à l''Energie Atomique et aux Energies Alternatives, SPEC CEA, CNRS, Université Paris-Saclay, F-91191, Gif sur Yvette Cedex, France;6. Université de Paris-Sud, F-91405, Orsay Cedex, France
Abstract:Isotopic ZnO thin films were deposited on the c-plane of ZnO single crystals by pulsed laser deposition. The isotopic abundance of Zn in the films was determined with a secondary ion mass spectrometry before and after the films was diffusion annealed. The diffusion profiles across the film/substrate interface behaved smooth features. The zinc diffusion coefficient (DZn) was obtained by analyzing the slope of the profile in the annealed sample. The temperature dependence of DZn was determined to be DZn(cm2/s)=8.0×104exp(?417[kJ/mol])/RT, where R and T are gas constant and temperature. The zinc ion diffusion coefficients were of the same order as that in a ZnO single crystal. A comparison of the experimental and theoretical values indicated that the zinc ions diffused in the thin film and the single crystal through a vacancy mechanism.
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