Optical characterization of band gap graded ZnMgO films |
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| Authors: | Woo Seok Choi Jong-Gul Yoon |
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| Institution: | 1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400 076, Maharashtra, India;2. University of Grenoble, Alpes, CRNS. Grenoble INP*, LMGP, F-38000 Grenoble, France;3. Electrical Engineering, Ohio State University, Columbus, Ohio 43210, USA;4. Department of Electronics and Communication Engineering, Kalyani Government Engineering College, Nadia 741235, West Bengal, India |
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| Abstract: | We investigated the optical properties of compositionally graded Zn1?xMgxO (g-ZnMgO) films using spectroscopic ellipsometry. The g-ZnMgO and ZnO films were grown on Pt/Ti/SiO2/Si substrates by ultrasonic spray pyrolysis. We simulated a uniformly graded optical band gap layer on the Pt substrate to reproduce the experimental result. The band gap of the bottommost layer of the g-ZnMgO film was estimated to be ～3.22 eV, the same as the undoped ZnO film. Then we considered a linearly increasing band gap with the film composition, and obtained a band gap of ～3.56 eV for the topmost layer of the film. In addition, the exciton peak showed a strong increase for the topmost layer of the film suggesting an important role of doping. |
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