Integrating functional oxides with graphene |
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| Authors: | X Hong K Zou AM DaSilva CH Ahn J Zhu |
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| Institution: | 1. Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588, USA;2. Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA;3. The Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA;4. Department of Applied Physics, Yale University, New Haven, CT 06520–8284, USA;1. ICMM, CISC, Instituto de Ciencia de Materiales de Madrid, Sor Juana Ines de la Cruz 3, Cantoblanco, Madrid, 28049, Spain;2. Department of Mechanical Engineering, University of Texas, 1 University Station, C2200, Austin, TX 78712-0292, Texas, USA;3. Solid State Physics Laboratory, Eidgenössische Technische Hochschule Zürich, Zürich, CH 8093, Switzerland;4. Department of Physics, Columbia University, 550 W 120th Street, New York, NY 10027, New York, USA;1. School of Physics and Engineering, and Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications, Henan University of Science and Technology, Luoyang 471023, China;2. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;3. Institute of Applied Physics, Department of Mathematics and Physics, Nanjing Institute of Technology, Nanjing 211167, China;4. School of Physical Science and Technology, Nanjing Normal University, Nanjing 210023, China;1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, PR China;2. Key Lab of Functional Materials for Electronic Information, MOE, Huazhong University of Science and Technology, Wuhan 430074, PR China;1. Chuiko Institute of Surface Chemistry, 17 General Naumov Street, 03164 Kyiv, Ukraine;2. Nanoscience & Nanotechnology Group, School of Pharmacy & Biomolecular Sciences, University of Brighton, Lewes Road, Brighton BN2 4GJ, United Kingdom;3. Taras Shevchenko University, 30 Vladimirskaya Street, 01030 Kiev, Ukraine;4. School of Engineering, Nazarbayev University, 53 Kabanbay Batyr Ave., Astana 010000, Kazakhstan;1. Max-Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany;2. Molecular Functional Materials, Department of Chemistry and Food Chemistry, Technische Universität Dresden, 01062 Dresden, Germany;3. University of Mainz, Institute of Physical Chemistry, Duesbergweg 10, 55128 Mainz, Germany |
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| Abstract: | Graphene–oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the intrinsic properties of graphene is also critical to fundamental studies and technological development of graphene. Here we review our recent effort on understanding the transport properties of graphene interfaced with ferroelectric Pb(Zr,Ti)O3 (PZT) and high-κ HfO2. Graphene field effect devices prepared on high-quality single crystal PZT substrates exhibit up to tenfold increases in mobility compared to SiO2-gated devices. An unusual and robust resistance hysteresis is observed in these samples, which is attributed to the complex surface chemistry of the ferroelectric. Surface polar optical phonons of oxides in graphene transistors play an important role in the device performance. We review their effects on mobility and the high source-drain bias saturation current of graphene, which are crucial for developing graphene-based room temperature high-speed amplifiers. Oxides also introduce scattering sources that limit the low temperature electron mobility in graphene. We present a comprehensive study of the transport and quantum scattering times to differentiate various scattering scenarios and quantitatively evaluate the density and distribution of charged impurities and the effect of dielectric screening. Our results can facilitate the design of multifunctional nano-devices utilizing graphene–oxide hybrid structures. |
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