Ferromagnetism in Cu-doped silicon carbide |
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| Authors: | Cuilian Zhao Congmian Zhen Yuanzheng Li Li Ma Chengfu Pan Denglu Hou |
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| Institution: | 1. Department of Chemistry, Azadshahr Branch, Islamic Azad University, Azadshahr, Golestan, Iran;2. Young Researchers Club, Islamic Azad University, Islamshahr Branch, Tehran, Iran;3. Department of Chemistry, Gonbad Kavoos Branch, Islamic Azad University, Gonbad Kavoos, Golestan, Iran;4. Department of Chemistry, Yazd Branch, Islamic Azad University, Yazd, Iran;1. Department of Physics, Malaviya National Institute of Technology, Malviya Nagar, JLN Marg, 302017 Jaipur, India;2. Inter University Accelerator Centre, Aruna Asif Ali marg, New Delhi 110067, India;3. National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India;4. Department of Physics, The LNM Institute of Information Technology, Jamdoli, 302031 Jaipur, India;1. Department of Chemistry, Qaemshahr Branch, Islamic Azad University, Qaemshahr, Iran;2. Islamic Azad University, Behshahr Branch, Iran;1. Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208-3113, United States;2. Laboratoire de Cristallographie, Résonance Magnétique, et Modélisations CRM2 (UMR UHP-CNRS 7036), Faculté des Sciences et Techniques, Université de Lorraine, BP 70239, Boulevard des Aiguillettes, 54506 Vandoeuvre-lès-Nancy Cedex, France |
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| Abstract: | Cu doped silicon carbide is shown to be ferromagnetic based on experiment results and first-principles calculations. The magnetization value of the Cu doped silicon carbide decreased as the Cu concentration increased. When the films were annealed at 800 °C, the ferromagnetic signal was increased. Reduction of the C vacancy concentration will introduce a large total moment in the system. Theoretically, compared with the case of one Cu atom replacing one Si atom, increasing the Cu doping, changing the Cu atom location or including carbon vacancies in the calculations for the system all make the ferromagnetic moment decrease. One Cu atom replacing one Si atom with the addition of one C vacancy makes the energy band gap of the system disappear. Our investigations suggest that the ferromagnetism arises from the hybridization between Cu 3d orbital and C 2p orbital. Ferromagnetic moment is influenced by a symmetry-lowering distortion of the surrounding lattice by the Cu dopant. |
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