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Towards 0.99999 28Si
Authors:P.G. Sennikov  A.V. Vodopyanov  S.V. Golubev  D.A. Mansfeld  M.N. Drozdov  Yu.N. Drozdov  B.A. Andreev  L.V. Gavrilenko  D.A. Pryakhin  V.I. Shashkin  O.N. Godisov  A.I. Glasunov  A.Ju. Safonov  H.-J. Pohl  M.L.W. Thewalt  P. Becker  H. Riemann  N.V. Abrosimov  S. Valkiers
Affiliation:1. Institute of Chemistry of High-Purity Substances RAS, Tropinin Str. 49, 603950 Nizhny Novgorod, Russia;2. Institute of Applied Physics RAS, Uljanova St. 46, Nizhny Novgorod, 603950, Russia;3. Institute for Physics of Microstructures RAS, GSP-105, 603950 Nizhny Novgorod, Russia;4. Central Design Bureau of Machine Building, Krasnogvardyskaya Sq. 3, 195112 Sankt-Petersburg, Russia;5. VITCON Projectconsult GmbH, Dornbluthweg 5, D-07743 Jena, Germany;6. Physics Department, Simon Fraser University, 888 University Drive, B.C., V5A 1S6 Burnaby, Canada;7. Physikalisch-Technische Bundesanstalt, Bundesallee 100, D-38116, Braunschweig, Germany;8. Leibniz-Institute for Crystal Growth, Max-Born-Str. 2, D-12489 Berlin, Germany;9. EU Institute for Reference Materials and Measurements, Retieseweg 111, B-2440 Geel, Belgium;1. Institute of Applied Physics of the Russian Academy of Sciences, Nizhny Novgorod 603950, Russia;2. GYCOM Ltd., Nizhny Novgorod 603950, Russia;3. Peter the Great St. Petersburg Polytechnic University, St. Petersburg 195251, Russia;4. Nizhny Novgorod State University, Nizhny Novgorod 603950, Russia;1. G.G. Devyatykh Institute of Chemistry of High Purity Substances, Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia;2. Institute of Applied Physics, Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia;3. N.I. Lobachevsky State University of Nizhni Novgorod, National Research University, 603950 Nizhny Novgorod, Russia;4. Institute of Physics and Technology, National Research Tomsk Polytechnic University, Tomsk 634050, Russia;1. Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan;2. Sophia Nanotechnology Research Center, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
Abstract:A new approach for producing high-purity silicon with isotopic enrichment of 28Si isotope is reported. The methods of centrifugal enrichment were modified to obtain the initial gaseous silicon tetrafluoride with a record-breaking enrichment of 0.99999664(11) with respect to 28Si. The effective conversion of silicon tetrafluoride into elementary silicon with minimal isotopic dilution was achieved in an electron cyclotron resonance discharge plasma, sustained by gyrotron microwave radiation with a frequency of 24 GHz. We have experimentally demonstrated the deposition of the layers of microcrystalline 28Si with enrichment of 0.999986 ± 0.000003, which is the best result at the present time.
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