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Issues with characterizing transport properties of graphene field effect transistors
Authors:Archana Venugopal  Luigi Colombo  Eric M Vogel
Institution:1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC) Chonbuk National University, Jeonju 54896, Republic of Korea;2. Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 15073, Republic of Korea;3. Department of Physics, Y.S.R. Engineering College of Yogivemana University, Proddatur-516 360, India;4. Department of Physics, Sri Venkateswara University, Tirupati-517502, India;1. Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000, People''s Republic of China;2. Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000, People''s Republic of China;3. Department of Physics, Shaoxing University, Shaoxing 312000, People''s Republic of China
Abstract:The transport properties of graphene field effect transistors are typically characterized using a conventional test structure consisting of graphene on silicon dioxide with deposited metal contacts. Two of the primary parameters affecting the total resistance of this structure are the channel mobility and contact resistance. A simple model is used to describe the impact of these parameters on total device resistance and experimentally extract them. Important issues related to characterizing the transport properties of graphene field effect transistors are presented and discussed.
Keywords:
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