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Growth of Epitaxial SiSn Films with High Sn Content for IR Converters |
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| Authors: | Timofeev V. A. Nikiforov A. I. Kokhanenko A. P. Tuktamyshev A. R. Mashanov V. I. Loshkarev I. D. Novikov V. A. |
| Affiliation: | 1.A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia ;2.National Research Tomsk State University, Tomsk, Russia ; |
| Abstract: | Russian Physics Journal - Growth of SiSn compounds with a Sn content from 10 to 35% is studied. The morphology and surface structure of the SiSn layers are examined and the kinetic diagram of the... |
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