Synthesis,electrical properties and transport mechanisms of thermally vacuum evaporated CdTe nanocrystalline thin films |
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| Authors: | AA Al-Ghamdi MS Abd El-sadek AT Nagat F El-Tantawy |
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| Institution: | 1. Physics Department, Faculty of Science, King Abdulaziz University, Jeddah, Saudi Arabia;2. Nanomaterial Laboratory, Physics Department, Faculty of Science, South Valley University, Qena, Egypt;3. Physics Department, Faculty of Science, Suez Canal University Isamilia, Ismailia, Egypt;1. Sumy State University, Rymskogo-Korsakova Str. 2, 4007 Sumy, Ukraine;2. Riga Technical University, 3 Paula Valdena Str., LV-1048 Riga, Latvia;3. Center for Physical Sciences and Technology, A. Gostauto Str. 11, LT-01108 Vilnius, Lithuania;4. Institute of Physics of National Academy of Sciences of Ukraine, 03028 Kyiv, Ukraine;1. Department of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617, PR China;2. College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, PR China;1. Department of Applied Physics, Hunan Agricultural University, Changsha 410128, PR China;2. Department of Graduate Studies, Hunan Agricultural University, Changsha 410128, PR China;3. Chemistry Department, Northwestern University, Evanston 60208, USA;1. Department of Applied Physics, Indian School of Mines, Dhanbad 826004, India;2. Department of Physics, Central University of Rajasthan, India;1. Department of Physics, RVS Technical Campus – Coimbatore, Coimbatore, Tamilnadu 641402, India;2. Department of Physics, PSG College of Arts and Science, Coimbatore, Tamilnadu 641014, India;3. Department of Physics, RVS Technical Campus – Coimbatore, Coimbatore, Tamilnadu 641402, India |
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| Abstract: | A stoichiometry CdTe nano-structured powder was synthesized by chemical process. Thin films of different thicknesses (40, 60, and 100 nm) of CdTe were prepared by thermal evaporation method onto silicon substrates. Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of CdTe nanocrystalline thin films deposited on p-Si as heterojunction have been investigated. At low voltages, current in the forward direction was found to obey the diode equation and the conduction was controlled by thermionic emission mechanism. Also, various electrical parameters were determined from the I–V and C–V analysis. The thickness dependence of the obtained capacitance–voltage (C–V) characteristics was also considered. |
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