Cross section and resonance effects in photoemission from Sn-doped In2O3(111) |
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| Authors: | K.H.L. Zhang D.J. Payne R.G. Egdell |
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| Affiliation: | 1. Institute for Technical Physics and Materials Science (MFA), Centre for Energy Research of the Hungarian Academy of Sciences, Konkoly Thege út 29-33, H-1121 Budapest, Hungary;2. Doctoral School of Physics, Faculty of Science, University of Pécs, Ifjúság útja 6, H-7624 Pécs, Hungary;3. Zuse Institute Berlin (ZIB), Takustrasse 7, D-14195 Berlin, Germany;4. Doctoral School of Molecular- and Nanotechnologies, Faculty of Information Technology, University of Pannonia, Egyetem u. 10, Veszprém H-8200, Hungary |
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| Abstract: | Photoemission spectra of Sn-doped In2O3(111) have been measured using a range of photon energies between 40 and 1300 eV. The intensity of structure at the bottom of the valence band associated with states of mixed Sn 5s/O 2p character increases with increasing photon energy relative to that of states of more dominantly O 2p character at the top of the valence band, as expected from one electron ionisation cross sections. In addition a pronounced resonance in the intensity of a weak conduction band feature is observed around the In 4p core threshold. |
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