Room-temperature ferromagnetism in N+-implanted ZnO:Mn thin films |
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| Authors: | H.B. Ruan L. Fang G.P. Qin T.Y. Yang W.J. Li F. Wu M. Saleem C.Y. Kong |
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| Affiliation: | 1. Department of Applied Physics, Chongqing University, Chongqing 400044, China;2. Optical Engineering Key Lab, Chongqing Normal University, Chongqing 400030, China;1. School of Physics and Technology, University of Jinan, 106 Jiwei Road, Jinan 250022, China;2. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dongnanhu Road, Changchun 130033, China;3. Department of Physics, Jilin University, Changchun 130023, China;1. Department of Mathematics, Institute of Mathematics, University of Rzeszów, ul. Rejtana 16A, 35-310 Rzeszów, Poland;2. M.P. University of Agriculture and Technology, Udaipur, India;3. Department of Mathematics, Rzeszów University of Technology, Al. Powstańców Warszawy 12, 35-959 Rzeszów, Poland;1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;2. Institute of Electronics and Sensor Materials, TU Bergakademie, Freiberg 71691, Germany;1. IFLP-CCT-La Plata-CONICET and Departamento de Física, Facultad de Ciencias Exactas, C. C. 67, Universidad Nacional de La Plata, 1900 La Plata, Argentina;2. Departamento de Ciencias Básicas, Facultad de Ingeniería, Universidad Nacional de La Plata, 1900 La Plata, Argentina;1. Departamento de Física, Instituto de Geociências e Ciências Exatas, Universidade Estadual Paulista, Rio Claro, SP, Brazil;2. Institut de Chimie et des Materiaux Paris Est, CNRS and Université Paris Est Créteil, 94320 Thiais, France;3. Departamento de Física, Universidade Federal de São Carlos, São Carlos, SP, Brazil;4. Instituto de Física de São Carlos, Universidade de São Paulo, SP, Brazil |
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| Abstract: | Mn–N co-doped ZnO films with wurtzite structure were fabricated by RF magnetron sputtering together with the ion-implantation technique. Then a post-annealing at 650 °C for 10 min in a N2 atmosphere was performed to activate the implanted N+ ions and recover the crystal quality, and a p-type ZnO:Mn–N film with a hole concentration of about 2.1×1016 cm?3 was obtained. It is found that the Mn mono-doped ZnO film only exhibits paramagnetic behavior, while after N+-implantation, it shows ferromagnetism at 300 K, and the magnetization of the ZnO:Mn–N films can be further enhanced by thermal annealing due to the activation of the N acceptors. Our experimental results confirm that the codoping N acceptors are favorable for ferromagnetic ordering of Mn2+ ions in ZnO, which is consistent with the recent theoretical calculations. |
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