Quintuple-period Si atomic wires with alternative double and triple modulations by metal: Mg/Si(557) |
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Authors: | BG Shin MK Kim JH Lee D-H Oh I Song SH Woo C-Y Park JR Ahn |
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Institution: | 1. BK21 Physics Research Division, Sungkyunkwan University, Suwon 440-746, Republic of Korea;2. College of Pharmacy, Chungnam National University, Daejeon 305-764, Republic of Korea;3. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea;4. SKKU Advanced Institute of Technology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea |
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Abstract: | The formation of Mg-induced quasi-one-dimensional atomic wires on a Si(557) surface was studied by low energy electron diffraction (LEED), scanning tunneling microscopy (STM), and first-principles calculations. The atomic wires were produced on the Si(557) surface without faceting when heated to 330 ?C. The atomic wires had a × 5 period along the wires, as observed by LEED. STM images showed the existence of three kinds of atomic wires in a unit cell: an atomic wire located at the step edge and the others on the terrace. Interestingly, alternative double and triple modulations resulting in the × 5 period was observed at the atomic wire located at the step edge. Among the variety of atomic structure models available, the one based on a honeycomb-chain-channel model, which is that of a metal/Si(111)-(3 × 1) surface, reproduced the STM images well and was relatively stable energetically. |
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