Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions |
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| Authors: | Basanta Roul Mahesh Kumar Mohana K Rajpalke Thirumaleshwara N Bhat AT Kalghatgi SB Krupanidhi |
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| Institution: | 1. Department of Physics, Faculty of Sciences, King Khalid University, P. O. Box 9004, Abha, Saudi Arabia;2. Department of Physics, Turabah University College, Taif University, 21995, Saudi Arabia;3. Department of Sciences and Technology, Rania University College, Taif University, 12975, Saudi Arabia;4. Department of Physics, Damietta Cancer Institute, Damietta, Egypt;5. Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha 61413, P. O. Box 9004, Saudi Arabia |
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| Abstract: | We present the study involving the dependence of carrier concentration of InN films, grown on GaN templates using the plasma assisted molecular beam epitaxy system, on growth temperature. The influence of InN carrier concentration on the electrical transport behavior of InN/GaN heterostructure based Schottky junctions is also discussed. The optical absorption edge of InN film was found to be strongly dependent on carrier concentration, and was described by Kane's k.p model, with non-parabolic dispersion relation for carrier in the conduction band. The position of the Fermi-level in InN films was modulated by the carrier concentration in the InN films. The barrier height of the heterojunctions as estimated from I–V characteristic was also found to be dependent on the carrier concentration of InN. |
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