Preparation and characterization of La0.5Sr0.5CoO3 /Al-doped ZnO thin film heterojunctions |
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| Authors: | Shin Lee Yi Hu |
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| Affiliation: | 1. Department of Physics, Payame Noor University, Tehran, 19395-3697, Iran;2. Department of Physics, Isfahan University of Technology, Isfahan, 84156-83111, Iran;3. Department of Physics, Semnan University, Semnan, 35195-363, Iran;1. Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000, PR China;2. Nanomaterials Research Group, Physics Division, PINSTECH, Nilore, 45650, Islamabad, Pakistan;3. Analytical and Testing Group, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000, PR China;1. Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya St. 6, 79005 Lviv, Ukraine;2. Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 12116 Prague 2, Czech Republic;1. Department of Physics, Quaid-i-Azam University, Islamabad 45320, Pakistan;2. Department of Physics, COMSATS Institute of Information Technology (CIIT), Islamabad 44000, Pakistan;3. Department of Physics, Bangladesh University of Engineering and Technology (BUET), Dhaka 1000, Bangladesh;4. National Center for Physics, Islamabad, Pakistan;5. Physics Division PINSTECH, P. O. Nilore, Islamabad, Pakistan |
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| Abstract: | In this study, p–n heterojunctions with La0.5Sr0.5CoO3 (LSCO) and Al-doped ZnO (AZO) thin films were fabricated by the radio frequency (r.f.) magnetron sputtering technique. The LSCO/AZO heterojunction was obtained by stacking the p-type LSCO thin film on the annealed n-type AZO thin film under different Ar: O2 sputter gas ratio atmosphere. The thickness of LSCO and AZO thin films are about 400 nm and 500 nm, respectively. Good crystalline match between LSCO and AZO films was observed from the SEM and XRD analysis. The heterojunction diode clearly demonstrated rectifying behavior in the range of ?8 to +8 V in reverse shape. The turn-on voltage of the diodes is obtained around 1.5 V and is in agreement with the value obtained from the difference in the work functions of LSCO and AZO. The band structure of the heterojunction was proposed based on the results of analysis. |
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