| JFET输入运算放大器辐射损伤的退火行为 |
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| 引用本文： | 郑玉展,陆妩,任迪远,王义元,郭旗,余学锋.JFET输入运算放大器辐射损伤的退火行为[J].半导体学报,2009,30(5):055001-3. |
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| 作者姓名： | 郑玉展 陆妩 任迪远 王义元 郭旗 余学锋 |
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| 作者单位： | Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China；Graduate University of Chinese Academy of Sciences, Beijing 100049, China;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China；Graduate University of Chinese Academy of Sciences, Beijing 100049, China;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China |
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| 摘 要： | The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers （op-amps） were investigated. High- and low-dose-rate irradiation results show that one of the JFET-input op-amps studied in this paper exhibits enhanced low-dose-rate sensitivity and the other shows time-dependent effect. The offset voltage of both op-amps increases during long-term annealing at room temperature. However, the offset voltage decreases at elevated temperature. The dramatic difference in annealing behavior at room and elevated temperatures indicates the migration behavior of radiation-induced species at elevated and room temperatures. This provides useful information to understand the degradation and annealing mechanisms in JFET-input op-amps under total ionizing radiation. Moreover, the annealing of oxide trapped charges should be taken into consideration, when using elevated temperature methods to evaluate low-dose-rate damage.
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| 关 键 词： | 运算放大器 退火行为 场效应管 辐射损伤 输入 低剂量率 偏移电压 时间依赖性 |
| 收稿时间： | 9/18/2008 4:12:15 PM |
Annealing behavior of radiation damage in JFET-input operational amplifiers |
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| Zheng Yuzhan,Lu Wu,Ren Diyuan,Wang Yiyuan,Guo Qi and Yu Xuefeng.Annealing behavior of radiation damage in JFET-input operational amplifiers[J].Chinese Journal of Semiconductors,2009,30(5):055001-3. |
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| Authors: | Zheng Yuzhan Lu Wu Ren Diyuan Wang Yiyuan Guo Qi and Yu Xuefeng |
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| Institution: | 1 Xinjiang Technical Institute of Physics and Chemistry;Chinese Academy of Sciences;Urumqi 830011;China;2 Graduate University of Chinese Academy of Sciences;Beijing 100049;China |
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| Abstract: | The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers (op-amps) were investigated. High- and low-dose-rate irradiation results show that one of the JFET-input op-amps studied in this paper exhibits enhanced low-dose-rate sensitivity and the other shows time-dependent ef-fect. The offset voltage of both op-amps increases during long-term annealing at room temperature. However, the offset voltage decreases at elevated temperature. The dramatic difference in annealing behavior at room and elevated temperatures indicates the migration behavior of radiation-induced species at elevated and room temperatures. This provides useful information to understand the degradation and annealing mechanisms in JFET-input op-amps under total ionizing radiation. Moreover, the annealing of oxide trapped charges should be taken into consideration, when using elevated temperature methods to evaluate low-dose-rate damage. |
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| Keywords: | JFET-input operational amplifiers dose rate radiation damage annealing behavior |
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