B掺杂对平面结构MOCVD-ZnO薄膜性能的影响

本文研究了B2H6掺杂流量(B掺杂)对平面结构MOCVD-ZnO薄膜的微观结构和光电性能影响.XRD、SEM和AFM测试的研究结果表明,玻璃衬底上制备的ZnO薄膜具有(002)峰择优取向的平面结构,B掺杂使薄膜的球状晶粒尺寸变小,10 sccm流量时晶粒尺寸为～15 nm.ZnO:B薄膜的最小电阻率为5.7×10-3Ω·cm.生长的ZnO薄膜(厚度d=1150 nm)在400～900 nm范围的透过率为82;～97;,且随着B2H6掺杂流量增大,光学吸收边呈现蓝移(即光学带隙Eg展宽)现象.

Effect of Boron-doping on Plane Zinc Oxide Thin Films Grown by Metal Organic Chemical Vapor Deposition

Transparent conductive boron-doped zinc oxide (ZnO:B) films with plane surface have been deposited on glass substrates by metal organic chemical vapor deposition, using diethylzinc (DEZn) and water as reactant the gases and diborane (B2H6) as the n-type dopant gas. The structural, electrical and optical properties of films grown at 403 K were investigated as a function of B2H6 flow rates (0 ～ 10 sccm). X-ray diffraction spectra (XRD) and scanning electron microscopy (SEM) images indicated these films oriented in the [002] crystallographic direction are with regular and uniformly smooth surfaces and the grain size of the films are smaller ( ～ 15 nm at 10 sccm) that of the undoped sample. Atomic force microscopy (AFM) also revealed that the ZnO:B film (at 10 sccm) was nanostructured and with a surface roughness of ～ 5 nm. The lowest resistivity for the ZnO : B films was about 5.7 × 10-3 Ω · cm. These as-grown ZnO films at different B2H6 flow rates exhibited a high transmittance ( ～ 82% -97% ) in the range of 400-900 nm with a thickness of ～ 1150 nm. The optical absorption edge was shown to shift to higher photon energy with increasing electron concentration, following the Burnstein-Moss law.