Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors |
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Authors: | Y Wang S W Liu X W Sun J L Zhao G K L Goh Q V Vu H Y Yu |
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Institution: | (1) School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798, Singapore;(2) Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore, 117602, Singapore; |
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Abstract: | Highly transparent In-Ga-Zn oxide (IGZO) thin films were fabricated by spin coating using acetate- and chlorate-based precursors,
and thin film transistors (TFTs) were further fabricated employing these IGZO films as the active channel layer. The impact
of the post-annealing temperature on the physical properties of IGZO films and performance of IGZO TFTs were investigated.
Compared to the nitrate-based IGZO precursor, the chlorate-based precursor increases the phase change temperature of IGZO
thin films. The IGZO films changed from amorphous to nanocrystalline phase in an annealing temperature range of 600–700 °C.
The transparency is more than 90% in the visible region for IGZO films annealed with temperatures higher than 600 °C. With
the increase of post-annealing temperature, the carrier concentration of IGZO film decreases, while the sheet resistance increases
firstly and then saturates. The bottom-gate TFT with IGZO channel annealed at 600 °C in oxygen showed the best performance,
which was operated in n-type enhancement mode with a field effect mobility of 1.30 cm2/V s, a threshold voltage of 10 V, and a drain current on/off ratio of 2.5 × 104. |
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