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偏硅酸镉的自激活发光
引用本文:雷炳富,刘应亮,华瑞年,石春山. 偏硅酸镉的自激活发光[J]. 分子科学学报, 2004, 20(1): 57-59
作者姓名:雷炳富  刘应亮  华瑞年  石春山
作者单位:1. 广州暨南大学化学系,广东,广州,510632;中国科学院长春应用化学研究所,吉林,长春,130022
2. 广州暨南大学化学系,广东,广州,510632
3. 中国科学院长春应用化学研究所,吉林,长春,130022
基金项目:国家自然科学基金资助项目(50072031,59982003),广东省自然科学基金资助项目(990484)
摘    要:利用高温固相法合成了一种具有自激活发光行为的CdSiO3基质.对样品进行了X射线衍射分析和光谱分析.光谱分析结果表明,在偏硅酸镉的发射光谱中存在三个自激活发光峰,它们分别位于380,467和560nm处,另外,通过热释光谱技术讨论了偏硅酸镉中的缺陷及相关机理.在热释光谱中有两个明显的热释峰,分别位于448和563K,它们的陷阱深度分别为0 58和0 61eV,表明了在偏硅酸镉中存在着不同的陷阱,这些陷阱的存在导致了偏硅酸镉的自激活发光.

关 键 词:偏硅酸镉  自激活发光  热释光
文章编号:1000-9035(2004)01-0057-03
修稿时间:2003-03-26

Self-actived luminescence of cadmium metasilicate
LEI Bing-fu. Self-actived luminescence of cadmium metasilicate[J]. Journal of Molecular Science, 2004, 20(1): 57-59
Authors:LEI Bing-fu
Affiliation:LEI Bing-fu~
Abstract:A new cadmium metasilicate matrix,which has the self-actived luminescence,was synthesized by solid-state reaction.The synthesized sample was characterized by X-ray diffraction,excitation and emission spectroscopy.There are three emission peaks in the self-actived cadmium metasilicate located at 380,467 and 560 nm,respectively.In addition,the thermoluminescence spectrum was adopted to discuss the mechanism of the self-actived luminescence of cadmium metasilicate.There are two obvious broad peaks in the thermoluminescence spectrum located at 448 and 563K,respectively.This result revealed that there were two different traps with various depth (0.58 and 0.61 eV)in the host lattice.
Keywords:cadmium metasilicate  self-actived luminescence  thermoluminescence
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