Properties of monolithic integration of a resonant tunneling diode and a quantum well laser |
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| Institution: | 1. School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013, China;2. EpiTop Optoelectronic Co., Ltd, Ma''anshan, 243000, China;3. Ma''anshan Jason Semiconductor Co., Ltd, Ma''anshan, 243000, China;1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | An investigation of the electrical and optical characteristics of a resonant tunneling diode monolithically integrated with a quantum well laser is carried out. An analytic expression for the propagating model current is given in terms of the total spontaneous emission rate. The laser is pumped by the current emitted by the resonant tunneling diode. When the current in the laser exceeds the threshold current, laser light is produced. Since the current in the laser exhibits negative differential resistance similar in behavior to the current of a resonant tunneling diode, a bistable light output can be obtained from this new device. |
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