Experimental analysis of resonant tunneling transit time using high-frequency characteristics of resonant tunneling transistors |
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| Institution: | 1. School of Aerospace Engineering and Applied Mechanics, Tongji University, Shanghai 200092, China;2. School of Automotive Studies, Tongji University, Shanghai 201804, China;3. Shanghai Automotive Wind Tunnel Center, Tongji University, Shanghai 201804, China |
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| Abstract: | We systematically estimate the resonant tunneling transit time from the high-frequency characteristics of resonant tunneling transistors. It is found that the transit time across an InGaAs/InAlAs resonant tunneling structure is more than one order of magnitude shorter than that for GaAs/AlAs with the same barrier layer thickness. In addition, the obtained times agree reasonably well with calculated phase time. It is probably the elastic resonance width and not the inelastic scattering effect that mainly determines the resonant tunneling transit time. |
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