Strain-induced changes in epitaxial layer morphology of highly-strained III/V-semiconductor heterostructures |
| |
| Institution: | 1. Department of Applied Physics, China Agriculture University, Beijing 100083, China;2. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;1. Institute of Condensed Matter Physics, Ecole polytechnique fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland;2. Department of Physics, SUPA, University of Strathclyde, John Anderson Building, 107 Rottenrow, Glasgow G4 0NG, United Kingdom;1. ASTRO-3D Centre of Excellence, School of Physics, University of Melbourne, Parkville, VIC, 3010, Australia;2. Indigenous Knowledge Institute, University of Melbourne, Parkville, VIC, 30130, Australia;3. Käte Hamburger Centre for Apocalyptic and Post-Apocalyptic Studies, Universität Heidelberg, Germany;4. School of Law and Society, University of the Sunshine Coast, Sippy Downs, QLD, 4556, Australia;5. RMIT University Library, RMIT University, Melbourne, VIC, 3000, Australia;6. College of Arts, Law, and Education, University of Tasmania, Hobart, TAS, 7005, Australia;7. Pro Vice-Chancellor (Aboriginal Leadership), University of Tasmania, Hobart, TAS, 7005, Australia;8. Department of Physics and Astronomy, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia |
| |
| Abstract: | We present a study of changes in the layer morphology of symmetrically strained (GaIn)As/Ga(PAs) superlattices as a function of strain and off-orientation of substrates. The samples were deposited by metal-organic vapour-phase epitaxy (MOVPE). For samples grown on exactly oriented (100) GaAs substrates sharp 2-dimensional interfaces are observed up to a lattice mismatch (Δd/d)⊥ = 2.4 · 10-2. The use of off-oriented (100) substrates leads to a strain induced surface roughening (3-dimensional growth mode) and the formation of laterally ordered thickness modulations during further growth. The surface steps due to the substrate off-orientation are regarded as a cause for this effect. We discuss the structural properties of the samples investigated by transmission electron microscopy (TEM) and high-resolution X-ray diffraction (XRD) as a function of the strain in the individual layers for samples grown on (100) GaAs substrates exactly oriented, 2° off towards 110] and 1.7° off towards 011], respectively. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
