Excitonic processes and lasing in ZnSSe/ZnSe superlattices |
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| Affiliation: | 1. Department of Physics, Jiangsu University of Science and Technology, Zhenjiang 212003, China;2. School of Material Science and Engineering, Jiangsu University, Zhenjiang 212003, China;1. National Renewable Energy Laboratory, Golden, CO 80401, United States;2. Department of Physics, Colorado School of Mines, Golden, CO 80401, United States;1. Department of Chemistry, Fujian Normal University, Fuzhou 350007, PR China;2. Research Center of Analysis and Measurement, Zhejiang University of Technology, Hangzhou 310014, PR China;3. Hangzhou Area Military Representative Office, Hangzhou, 310011, PR China;4. Institute of Environmental Science and Engineering, Hangzhou Dianzi University, Hangzhou 310018, PR China |
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| Abstract: | We report the results of a systematic investigation of the stimulated emission in ZnSSe/ZnSe superlattices, by time resolved luminescence and high excitation intensity magaetoluminescence. The stimulated emission is found to have excitation origin from localized states around the thresold, and free-carrier origin at carrier densities well above the phase space filling thresold of the exciton. |
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