Electroreflectance studies of thin GaAs/AlGaAs quantum well structures with tunable 2DEG densities |
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| Institution: | 1. Lobachevsky State University of Nizhny Novgorod, Gagarin av. 23/3, 603950 Nizhny Novgorod, Russia;2. Department of Physics and I3N, University of Aveiro, 3810-193 Aveiro, Portugal;3. National University of Science and Technology “MISiS”, 119049 Moscow, Russia;1. Harbin Institute of Technology, Harbin, People''s Republic of China;2. Shanghai Institute of Space Power Source, Shanghai, People''s Republic of China;1. The Islamia University of Bahawalpur, Department of Computer Science & Information Technology, Pakistan;2. University of Essex, Colchester, United Kingdom;1. Physics Department, Korea University, Seoul 136-713, South Korea;2. Physics Department, University of Notre Dame, Notre Dame, IN 46556, USA |
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| Abstract: | We report the results of low-temperature electroreflectance (ER) and photoluminescence (PL) investigations on thin n-type modulation-doped GaAs/AlGaAs single quantum well structures. The density of the two-dimensional electron gas (2DEG) is varied continuously from zero to Ns∼6*1011 cm-2, using a Schottky gate, and is detected optically via the Stokes shift between the ER and PL subband transitions. For the first time, the splitting between transitions involving the first electron subband and the first heavy and light hole subbands, respectively, is studied as a function of the 2DEG density using ER spectroscopy. The results are discussed in comparison with the calculated in-plane dispersion of the hole subbands. Clear evidence is given for the influence of exciton screening effects. |
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