Slow decay dynamics of visible photoluminescence from nanometer-size silicon crystallites |
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| Affiliation: | 1. International Training Institute for Materials Science, Hanoi University of Science and Technology, Hanoi, Viet Nam;2. Faculty of Electromechanical and Civil Engineering, Vietnam National University of Forestry, Hanoi, Viet Nam,;3. Lighting Research Institute, Phenikaa University, Hanoi, Viet Nam;1. Faculty of Biotechnology, Chemistry and Environmental Engineering, Phenikaa University, Hanoi 12116, Viet Nam;2. Department of Chemistry, Hanoi Pedagogical University 2, Phuc Yen, Vinh Phuc, Viet Nam;3. Polymer Center, A&A Green Phoenix Group JSC, Hanoi 10000, Viet Nam;4. Faculty of Materials Science and Engineering, Phenikaa University, Hanoi 12116, Viet Nam;5. Institute of Chemistry, Vietnam Academy of Science and Technology, 18, Hoang Quoc Viet Street, Cau Giay District, Hanoi 10000, Viet Nam;6. Institute of Materials Science, Vietnam Academy of Science and Technology, 18, Hoang Quoc Viet Street, Cau Giay District, Hanoi 10000, Viet Nam;7. Faculty of Fundamental Sciences, Phenikaa University, Hanoi 12116, Viet Nam;1. Faculty of Fundamental Sciences, Phenikaa University, Yen Nghia, Ha-Dong District, Hanoi 10000, Viet Nam;2. Electronic Convergence Materials Center, Advanced Materials Convergence R&D Division, Korea Institute of Ceramic Engineering & Technology, Jinju 52851, South Korea;3. Faculty of Materials Science and Engineering, Phenikaa University, Yen Nghia, Ha-Dong District, Hanoi 10000, Viet Nam;4. Leibniz Institute for Solid State and Materials Research, Dresden 01069, Germany;5. Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea;6. School of Materials Science and Engineering / Department of Materials Convergence and System Engineering, Changwon National University, Changwon 51140, South Korea |
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| Abstract: | We have studied the decay dynamics of visible photoluminescence (PL) from nanometer-sized Si crystallites fabricated by electrochemical etching of single crystalline Si and laser-breakdown of SiH4 gas. In two types of Si crystallites, the slow decay behavior of red PL is characterized by a stretched exponential function. The temperature dependence of the PL decay rate is similar to that of variable-range hopping of carriers in two-dimensional systems. It is concluded that the slow decay PL is caused by the hopping-limited recombination in surface states of nanocrystallines.PACS: 73.20.Dx; 78.66.-w; 78.90.+t |
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