Effective barriers induced by confined carriers in space charge spectroscopy of Si/Ge quantum wells |
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| Institution: | Institute of Semiconductor Physics, D-15204 Frankfurt (Oder), Germany and A. F. Ioffe Physico-Technical Institute, St. Petersburg, Russia;LPS, Faculty of Sciences, Sidi Mohamed Ben Abdellah University, BP, 1796, Fez, Morocco;LPS, Faculty of Sciences, Sidi Mohamed Ben Abdellah University, BP, 1796, Fez, Morocco;High School of Applied Science (ENSA), Sidi Mohamed Ben Abdellah University, Morocco;LPS, Faculty of Sciences, Sidi Mohamed Ben Abdellah University, BP, 1796, Fez, Morocco;LPS, Faculty of Sciences, Sidi Mohamed Ben Abdellah University, BP, 1796, Fez, Morocco;LPS, Faculty of Sciences, Sidi Mohamed Ben Abdellah University, BP, 1796, Fez, Morocco |
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| Abstract: | Results are presented concerning the characterization of p-Si/Si1-xGex/Si quantum wells (QW) by space charge spectroscopy. Analysis of potential barriers at the QW enables us to determine the valence band offset from such measurements. Admittance spectroscopy data of QWs with 30 nm undoped spacers, acceptor concentration NA of about 1017cm-3 in the cap and buffer layers, x=0.25 and a QW thickness in the range from 1 to 5 nm are in fair agreement with the proposed theoretical model. A decrease of the effective potential barriers due to hole tunneling via shallow acceptor states in the barrier is experimentally confirmed for 5 nm QW structures without spacers. |
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