A simple approximative method for determination of Auger 1 lifetime in degenerate narrow gap semiconductors |
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| Affiliation: | 1. University of Ljubljana, School of Economics and Business, Kardeljeva ploscad 17, 1000 Ljubljana, Slovenia;2. SOAS University of London, Thornhaugh Street, Russell Square, London WC1H 0XG, UK;1. Africa-Asia Centre of Sustainability Research, University of Aberdeen, Business School, 719 Mac Robert Building, AB24 3FX Aberdeen, United Kingdom;2. Lancaster University Management School, United Kingdom;3. SOAS, University of London, Thornhaugh Street, Russell Square, London WC1H 0XG, United Kingdom;4. Alfaisal University, Saudi Arabia;5. Birmingham Business School, University of Birmingham, Edgbaston Park Road, Birmingham B15 2TY, United Kingdom |
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| Abstract: | Using the well-known Beattie-Landsberg expression for Auger 1 lifetime and the “effective” Auger energy gap (EgA), we obtained a simple approximative expression for determination of the Auger 1 lifetime. We also obtained a formula for the electron concentration above which the effects of degeneration are significant. |
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