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Probing the interface fluctuations in semiconductor superlattices using a magneto-transport technique |
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| Institution: | 1. College of Electrical Engineering, Anhui Polytechnic University, Wuhu 241000, China;2. College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China;3. State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China |
| Abstract: | We have analysed the vertical transport properties of a GaAs/AlAs short period superlattice as the crossed magnetic field is rotated in the plane of the layers. The rotation of the magnetic field has been used to probe the interface roughness along the different in-plane crystallographic directions. Two maxima separated by 180° in the current intensity have been observed when the magnetic field is rotated through 360°. We interpret our results in terms of anisotropic scattering from elliptical interface defects of which the great axis is along 11̄0] and the minor one along 110]. |
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