Hot electron energy and momentum relaxation in GaAs/AlAs and GaAs/Ga1-xAlxAs multiple quantum wells |
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Institution: | 1. Technopark Borj Cedria, Soliman, Tunisia;2. University of Valladolid, Valladolid, Spain |
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Abstract: | Experimental results on high electric field longitudinal transport in GaAs/AlAs and GaAs/Ga1-xAlxAs multiple quantum wells (MQW) are presented and compared with the prediction of a dielectric continuum model. We draw from our experiments the following four conclusions.(i) In GaAs/Ga1-xAlxAs systems the dominant energy and momentum relaxation mechanism is through scattering with GaAs -modes.(ii) However, in GaAs/AlAs systems the AlAs interface mode is dominant in relaxing the energy and momentum of the quantum well electrons.(iii) The hot electron momentum relaxation as obtained from the high-field drift velocity experiments is strongly affected by the production of hot phonons as expected from a model involving a non-drifting hot phonon distribution.(iv) The importance of the AlAs interface mode in GaAs/Ga1-xAlxAs MQW is not the result of the intrinsic scattering rate but related to its shorter lifetime, compared to GaAs modes. |
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