Tailoring InAs/Ga1-xInxSb superlattices for long-wavelength IR applications |
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| Affiliation: | 1. State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai 200433, China;2. State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;3. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;4. University of the Chinese Academy of Sciences, Beijing 100039, China;5. Shanghai University of Electric Power, Shanghai 200090, China;1. Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan;2. Department of Otolaryngology-Head and Neck Surgery, Chang Gung Memorial Hospital, Taoyuan 333, Taiwan;3. Department of Physics, Chung Yuan Christian University, Taoyuan 333, Taiwan;1. Department of Physics, Inha University, Inchon, 402-751, South Korea;2. Korea Electronics Technology Institute, Seongnam, Gyeonggi-do, 463-816, South Korea;1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, China;2. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
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| Abstract: | A systematic study has been carried out on the design of long-wavelength infrared detector materials from InAs/GaSb and InAs/GaInSb supelattices with absorption energies below 250 meV, i.e. λ > 5 μm. The influence from layer thicknesses and alloy composition on cut-off wavelength and optical matrix element has been analysed. A three-band envelope-function model including strain effects was used to calculate conduction-band electron and valence-band light-hole states, while an effective-mass approximation was used to describe heavy-hole states. In order to achieve useful absorption coefficients, the period of such superlattices must be less than typically 20 monolayers. Calculations revealed that the absorption can be increased with almost unaffected cut-off wavelength by reducing the GaInSb thickness. The effects of including a small amount of In in the GaSb in order to reach longer wavelengths were studied. One conclusion is that although it makes longer wavelengths possible, it also makes the cut-off wavelength much more sensitive to monolayer and composition fluctuations. |
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