Bandgap tuning of semiconductor quantum well structures using ion implantation |
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| Institution: | 1. Lehrstuhl für Funktionelle Materialien, Physik-Department, Technische Universität München, James-Franck-Str. 1, 85748 Garching, Germany;2. Heinz Maier-Leibnitz Zentrum (MLZ), Technische Universität München, Lichtenbergstrasse 1, 85748 Garching, Germany;3. Institute for Applied Materials (IAM), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany;4. Deutsches Elektronen Synchrotron (DESY), Notkestr. 85, 22607 Hamburg, Germany;5. Institut für Physik, Universität Rostock, A.-Einstein-Str. 23-24, 18059 Rostock, Germany;6. Swiss-Norwegian Beam Lines, ESRF-The European Synchrotron, 71, Avenue des Martyrs, 38042 Grenoble Cedex 9, France;7. ESRF-The European Synchrotron, 71, Avenue des Martyrs, 38042 Grenoble Cedex 9, France;8. Helmholtz-Zentrum Hereon, Max-Planck-Str. 1, 21502 Geesthacht, Germany |
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| Abstract: | Ion induced QW intermixing using broad area and focused ion beam (FIB) implantation was investigated at low energy (32 and 100 keV respectively) in three different material systems (GaAs/AlGaAs, InGaAs/GaAs, and lattice matched InGaAs/InP). Repeated sequential ion implants and rapid thermal anneals (RTAs) were successful in delivering several times the maximum QW bandgap shift achievable by a single implant/RTA cycle. The effectiveness of broad area high energy implantation (8 MeV As4+) on QW intermixing was also established for GRINSCH (graded-index separate confinement heterostructure) QW laser structures grown in InGaAs/GaAs. Lastly, preliminary work illustrating the effects of implant temperature and ion current density was carried out for InGaAs/GaAsQWs. |
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