Growth of narrow gap epilayers and p-n junctions on silicon for infrared detectors arrays |
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| Affiliation: | 1. U.S. Food and Drug Administration, 6502 South Archer Road, Bedford Park, Illinois 60501;2. Department of Biosystems and Agricultural Engineering, Michigan State University, East Lansing, Michigan 43824;3. Department of Food Science and Nutrition/Institute for Food Safety and Health, Illinois Institute of Technology, 6502 South Archer Road, Bedford Park, Illinois 60501, USA |
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| Abstract: | Lead telluride epilayers and p-n junctions were grown on silicon substrates by hot wall epitaxy in order to construct monolithic infrared (IR) detectors arrays, using II-a fluorides as buffer layers. Schottky barriers were also made in the same epilayers to compare the figures of merit. The p-n junctions had performances comparable with the metal barriers and both devices had noise sources in addition to the expected thermal and background ones. |
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