Raman study of interface modes in GaSb/InAs superlattices with controlled interface composition |
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| Institution: | 1. Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China;2. Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, China;3. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, CAS, Shanghai 200050, China;4. Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA;5. Lawrence Berkeley National Lab, 1 Cyclotron Road, Berkeley, CA, USA;1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2. State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China;3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;4. Department of Physics, Renmin University of China, Beijing 100872, China;1. School of Materials Science and Engineering, Interdisciplinary Materials Research Center, Tongji University, 4800 Caoan Road, Shanghai 201804, China;1. Key Laboratory for Macromolecular Science of Shaanxi Province and Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials and Engineering, Shaanxi Normal University, Xi''an, 710062, PR China;2. Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, PR China;1. School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK, 73019, USA;2. Advanced Radar Research Center, University of Oklahoma, Norman, OK, 73019, USA;1. Key Laboratory for Macromolecular Science of Shaanxi Province, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi''an, 710119, China;2. Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China;3. Ningbo Radi-Cool Institute for Energy and Environmental Solutions, Ningbo, 315500, China |
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| Abstract: | We have performed a Raman scattering study of GaSb/InAs superlattices grown by MOVPE using different gas switching sequences to control the interface type. The identification of an InSb interface mode, clearly resolved already at room temperature, has been revised. A strongly localised GaAs-like interface mode has been used for the first time to characterise sequentially grown interfaces in an independent and selective way. |
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