Nonlinear current-voltage characteristic in narrow channels and low-voltage breakdown of the quantum hall effect |
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| Affiliation: | 1. I. M. Frantsevich Institute for Problems of Materials Science, NAS of Ukraine 3, Pritsaka Str., Kyiv, 03142, Ukraine;2. V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Nauky Av., Kyiv, 03028, Ukraine;3. V. Bakul Institute for Superhard Materials, NAS of Ukraine, 2 Avtozovodska Str., Kyiv, 04074, Ukraine;4. Institute of Applied Physics, NAS of Ukraine, 58 Petropavlivska Str., Sumy, 40000, Ukraine;5. Borys Grinchenko Kyiv Metropolitan University, NAS of Ukraine, 18/2 Bulvarno-Kudriavska Str., Kyiv, 04053, Ukraine;1. Department of Physics, College of Sciences, Yasouj University, Yasouj, 75918, Iran;2. Department of Physics, College of Sciences, Jahrom University, Jahrom, 74135-111, Iran;3. Department of Mathematics, College of Sciences, Yasouj University, Yasouj, 75918, Iran;1. Research Institute of Physics and Faculty of Physics, Southern Federal University, Russian Federation;2. Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, Siberian Branch of Russian Academy of Sciences, Russian Federation;3. Scientific-Practical Materials Research Centre of NAS of Belarus, Belarus |
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| Abstract: | The current-voltage characteristic (CVC) and the breakdown of the quantum Hall effect (QHE) are considered in narrow quasi-two-dimensional channels subject to a strong perpendicular magnetic field B. The interaction of electrons with acoustical and piezoelectrical phonons leads to electron transitions at the edges of the channel and to the main dissipation if the channel width W is not too large. Nonheating negative differential conduction (djx/dEx < 0), when an electric field Ex is applied along the channel, is possible for drift velocities vD smaller, much smaller, or larger than the speed of sound s. The CVC jx = jx (Ex), is substantially nonlinear if vD is not too small. The results agree with the observations [1] (vD ∼ s/20) in metal oxide-semiconductor (MOS) structures. The observed exponential increase in the dissipation before breakdown [2], by two orders of magnitude, is explained as well. The anisotropy of the electron-phonon interaction in MOS structures and its substantial influence on the CVC and vD is also considered. |
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