掺杂物对MgB_2超导电性能影响的研究进展

总结了不同掺杂物对MgB2超导电性能影响的研究现状,具体介绍了不同粒度、不同类型的掺杂物对MgB2超导电性的影响。目前的研究结果表明:所有掺杂都降低了MgB2的临界转变温度,而除Cu外的大部分掺杂物都可改善MgB2的不可逆磁场Hirr,提高其临界电流密度Jc;在所有掺杂物中,纳米级S iC掺杂对MgB2的超导电性能改进最大。基于目前的研究现状和结果,最后文中对MgB2超导材料的应用前景进行了展望。

Research progress of the effect of adulterant on the superconductivity of MgB2

The discovery of the superconductor MgB_2 with a transition temperature near 40 K has promoted a new interest in the area of fundamental and applied research on superconducting materials.This paper introduces the progress of adulterant research on the superconductivity of MgB_2.The effect of different grain size and different type doping on the critical current density of MgB_2 is reviewed.According to the different research result,we found all doping procession decrease Tc while Most doping leads to improvement of J_c(H) and Hirr performance except Cu.Among all the doping studied so far, nano SiC doping showed the most significant and reproducible enhancement in J_c(H).On the base of research actuality,at last we reported the prospective applications of the new superconductor MgB_2.