| MODEL AND MODELING OF LOW TEMPERATURE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR TRANSISTORS |
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| 引用本文： | 黄流兴,魏同立,郑茳,曹俊诚. MODEL AND MODELING OF LOW TEMPERATURE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR TRANSISTORS[J]. 电子科学学刊(英文版), 1994, 11(3): 277-283. DOI: 10.1007/BF02684836 |
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| 作者姓名： | 黄流兴 魏同立 郑茳 曹俊诚 |
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| 作者单位： | Microelectronic Center，Southeast University，Nanjing 210018，Microelectronic Center，Southeast University，Nanjing 210018，Microelectronic Center，Southeast University，Nanjing 210018，Microelectronic Center，Southeast University，Nanjing 210018 |
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| 基金项目： | Supported by National Natural Science Foundation of China |
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| 摘 要： | A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of holes through polysilicon/silicon interface oxide layer and reduced mobility mechanism in polysilicon. The modeling results based on this model are in good agreement with experimental data.
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Model and modeling of low temperature current gain of polysilicon emitter bipolar transistors |
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| Huang Liuxing,Wei Tongli,Zheng Jiang,Cao Juncheng. Model and modeling of low temperature current gain of polysilicon emitter bipolar transistors[J]. Journal of Electronics, 1994, 11(3): 277-283. DOI: 10.1007/BF02684836 |
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| Authors: | Huang Liuxing Wei Tongli Zheng Jiang Cao Juncheng |
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| Affiliation: | (1) Microelectronic Center, Southeast University, 210018 Nanjing |
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| Abstract: | A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of holes through polysilicon/silicon interface oxide layer and reduced mobility mechanism in polysilicon. The modeling results based on this model are in good agreement with experimental data. |
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| Keywords: | Bipolar transistor Polysilicon emitter Current gain Low temperature |
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