四激光束干涉光刻制造纳米级孔阵的理论分析

为提供一个在大范围内曝光出深亚微米甚至纳米级周期性密集图形的廉价的方法,研究了四激光束干涉光刻的原理,分析了干涉曝光的结果,并进行了计算机模拟.用现有的光源,如442 nm、365 nm、248 nm、193 nm激光,曝光得到的图形的临界尺寸容易做到180～70 nm.具有实际上无限制的焦深和容易实现的大视场.适合硅基CCDs、平场显示器的场发射电极阵列等光电子器件中大范围内超亚微米级的周期性孔阵或点阵结构图形的制作.

Theoretical Analysis for Fabricating Nanometer Hole Array with 4 Laser Beams Interference Lithography

For a cheaper and simpler way to expose deep sub-micrometer even nanometer dense periodic patterns over large size field, the principle of the interference lithography with four laser beams is studied, the results of interferentially exposing are analysed, and the simulation results by computer are given. The 180～70 nm critical dimension(CD)of exposed patterns can easilier be obtained by the light source such as the 442 nm, 365 nm, 248 nm and 193 nm lasers. The depth of focus is effectively infinite, and the large field size can more easily be fulfilled. It is suited for fabricating the deep sub-micrometer periodic patterns in large field size used in opto-eletronical components, such as the array of holes or dots in Si-based CCDs, the array of field emitters for flat panel displays, etc.